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PDF B1490 Data sheet ( Hoja de datos )
| Número de pieza | B1490 | |
| Descripción | PNP Transistor - 2SB1490 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de B1490 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Power Transistors
2SB1490
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to 2SD2250
20.0±0.5
φ 3.3±0.2
Unit: mm
5.0±0.3
(3.0)
■ Features
• Optimum for 80 W HiFi output
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−160
−140
−5
−7
−12
90
3.5
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Internal Connection
B
C
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
www.DCaotlaleSchtoere-et4mUit.tceormvoltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCB = −160 V, IE = 0
VCE = −140 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −6 A
IC = −6 A, IB = −6 mA
IC = −6 A, IB = −6 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −6 A, IB1 = −6 mA, IB2 = 6 mA
VCC = −50 V
−140
2 000
5 000
V
−100 µA
−100 µA
−100 µA
30 000
−2.5 V
−3.0 V
20 MHz
1.0 µs
1.5 µs
1.2 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2 5 000 to 15 000 8 000 to 30 000
Publication date: March 2003
SJD00077BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet B1490.PDF ] | |
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