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International Rectifier |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
www.DataSheet4UIF.c@omTC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
IRGB6B60KD
D2Pak
TO-262
IRGS6B60KD IRGSL6B60KD
Max.
600
13
7.0
26
26
13
7.0
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04
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IRG/B/S/SL6B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
––– 0.3 ––– V/°C
1.5 1.80 2.20 V
––– 2.20 2.50
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 5.0A, VGE = 15V
5, 6,7
IC = 5.0A,VGE = 15V,
TJ = 150°C 9,10,11
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
9,10,11
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance
––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.25 1.45
––– 1.20 1.40 V
IC = 5.0A
IC = 5.0A
TJ = 150°C
8
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
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Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
––– 18.2 –––
IC = 5.0A
Gate - Emitter Charge (turn-on)
––– 1.9 ––– nC VCC = 400V
CT1
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
––– 9.2 –––
VGE = 15V
––– 110 210 µJ IC = 5.0A, VCC = 400V
CT4
Turn-Off Switching Loss
––– 135 245
VGE = 15V,RG = 100Ω, L =1.4mH
Total Switching Loss
––– 245 455
Ls = 150nH
TJ = 25°C
Turn-On Delay Time
––– 25 34
IC = 5.0A, VCC = 400V
CT4
Rise Time
––– 17 26
VGE = 15V, RG = 100Ω L =1.4mH
Turn-Off Delay Time
––– 215 230 ns Ls = 150nH, TJ = 25°C
Fall Time
––– 13.2 22
Turn-On Switching Loss
Turn-Off Switching Loss
––– 150 260
IC = 5.0A, VCC = 400V
––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
CT4
13,15
Total Switching Loss
––– 340 560
Ls = 150nH
TJ = 150°C WF1WF2
Turn-On Delay Time
––– 28 37
IC = 5.0A, VCC = 400V
14, 16
Rise Time
––– 17 26
VGE = 15V, RG = 100Ω L =1.4mH
CT4
Turn-Off Delay Time
––– 240 255 ns Ls = 150nH, TJ = 150°C
WF1
Fall Time
––– 18 27
WF2
Input Capacitance
––– 290 –––
VGE = 0V
Output Capacitance
––– 34 ––– pF VCC = 30V
Reverse Transfer Capacitance
––– 10 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 26A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 100Ω CT2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V, RG = 100Ω
VCC = 360V, VGE = +15V to 0V
CT3
WF4
Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C
Diode Reverse Recovery time
––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH
17,18,19
20, 21
Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH CT4,WF3
Note: to are on page 15
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