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PDF FW359 Data sheet ( Hoja de datos )
| Número de pieza | FW359 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : ENN7549
FW359
N-Channel and P-Channel Silicon MOSFETs
FW359
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
• The FW359 in corporates a N-channel MOSFET
unit : mm
and a P-channel MOSFET that feature
2129
low ON-resistance, ultrahigh-speed switching,
and 4V drive, thereby enabling high-density mounting.
8
• Excellent ON-resistance characteristic.
[FW359]
5
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Source1
2 : Gate1
0.2
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW=10s)
Drain Current (PW=100ms)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
www.DataCShhaenneet4l TUe.mcopemrature
Storage Temperature
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
duty cycle≤1%
duty cycle≤1%
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (2000mm2!0.8mm)1unit, PW≤10s
Mounted on a ceramic board (2000mm2!0.8mm), PW≤10s
Ratings
N-channel P-channel
60 --60
±20 ±20
3 --3
3.5 --3.5
5.5 --5.5
14 --14
1.8
2.2
150
--55 to +150
Unit
V
V
A
A
A
A
W
W
°C
°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : W359
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
Ratings
min typ max
Unit
60 V
1 µA
±10 µA
1.2 2.6 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100552 No.7549-1/6
1 page  
FW359
SW Time -- ID
[Pch]
Ciss, Coss, Crss -- VDS [Pch]
1000
10000
7
VDD= --30V
7
f=1MHz
5
VGS= --10V
5
33
22
td(off)
100
7
tf
5
1000
7
5
Ciss
3 tr
3
2
td(on)
10
7
5
2
100 Coss
7
5 Crss
33
22
1.0
--0.1
23
--10
VDS= --30V
--9 ID= --3A
--8
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 --10
IT06058
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30
Total Gate Charge, Qg -- nC
IT06060
PD(FET 1) -- Ta(FET 2) [Nch, Pch]
2.4
Mounted on a ceramic board(2000mm2!0.8mm),
2.2 PW≤10s
2.0
1.8
1.6
www.DataShe1e.4t4U.com
1.2
1.0
0.8
10
0 --10 --20 --30 --40 --50 --60
Drain-to-Source Voltage, VDS -- V IT06059
ASO
[Pch]
3
2 IDP= --14A
≤10µs
--10
7
5 ID= --3A
3
2
--1.0
7
10m1sm1s00µs
100ms
5
3
2 Operation in this area
--0.1 is limited by RDS(on).
DC
10s
operation
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(2000mm2!0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100
Drain-to-Source Voltage, VDS -- V IT06062
PD -- Ta
[Nch, Pch]
2.5
Mounted on a ceramic board(2000mm2!0.8mm),
2.2 PW≤10s
2.0
1.8
1.5
1.0
1unTitotal dissipation
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Allowable Power Dissipation(FET 2), PD -- W IT06063
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06064
No.7549-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FW359.PDF ] | |
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