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PDF K4145 Data sheet ( Hoja de datos )
| Número de pieza | K4145 | |
| Descripción | MOSFET ( Transistor ) - 2SK4145 | |
| Fabricantes | NEC | |
| Logotipo |  |
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 1. N-Ch Power MOSFET - NEC  Hay una vista previa y un enlace de descarga de K4145 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4145
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low input capacitance
Ciss = 5300 pF TYP.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
2SK4145-S19-AY Note
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-220 typ. 1.9 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
www.DataSDheraeitn4UC.ucorrment (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±84
±215
84
1.5
150
−55 to +150
32
102
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18760EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
VGS = 10 V
ID = 42 A
16
12
8
4
0
-75
Pulsed
-25 25 75 125
Tch - Channel Temperature - °C
175
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
tr
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tf
10
www.DataSheet4U.com
ID - Drain Current - A
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100
VGS = 10 V
0V
10
1
0.1
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK4145
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50
VDD = 48 V
30 V
12 V
40
10
8
30 VGS 6
20 4
10
0
0
VDS 2
ID = 84 A
0
10 20 30 40 50 60 70 80 90
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D18760EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K4145.PDF ] | |
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