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PDF 2N120CND Data sheet ( Hoja de datos )
| Número de pieza | 2N120CND | |
| Descripción | HGTP2N120CND | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTP2N120CND, HGT1S2N120CNDS
Data Sheet
January 2000 File Number 4681.2
13A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49313. The Diode used is the development type TA49056
(Part number RHRD4120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49311.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120CND
TO-220AB
2N120CND
HGT1S2N120CNDS TO-263AB
2N120CND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120CNDS9A.
Symbol
www.DataSheet4U.com
C
G
Features
• 13A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP2N120CND, HGT1S2N120CNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
400
RG = 51Ω, L = 5mH, VCE = 960V
350
VGE = 12V, VGE = 15V, TJ = 150oC
300
700
600
500
250 400
RG = 51Ω, L = 5mH, VCE = 960V
TJ = 150oC, VGE = 12V OR 15V
200 300
150
VGE = 12V, VGE = 15V, TJ = 25oC
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
5.0
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
TJ = 25oC, VGE = 12V OR 15V
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
5.0
40
DUTY CYCLE <0.5%, VCE = 20V
35 250µs PULSE TEST
30
25
20
15
TC = -55oC
10
5 TC = 25oC
0
789
TC = 150oC
10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
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FIGURE 13. TRANSFER CHARACTERISTIC
15
16
IG (REF) = 1mA, RL = 260Ω, TC = 25oC
14
VCE = 1200V
12
10
8
VCE = 400V VCE = 800V
6
4
2
0
0 5 10 15 20 25
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
30
90
FREQUENCY = 1MHz
80
70
CIES
60
50
40
30
20 COES
10
CRES
0
0
5
10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
DUTY CYCLE <0.5%, TC = 110oC
250µs PULSE TEST
4
VGE = 15V
3
VGE = 10V
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
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