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PDF FSB50825US Data sheet ( Hoja de datos )
| Número de pieza | FSB50825US | |
| Descripción | Smart Power Module | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de FSB50825US (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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October 2008
FSB50825US
Smart Power Module (SPM®)
Features
• 250V 8A 3-phase FRFET inverter including high voltage inte-
grated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level (MSL) 3
General Description
FSB50825US is a tiny smart power module (SPM®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50825US
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50825US is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
www.DataAShbeseto4Ul.ucotme Maximum Ratings
Symbol
Parameter
Conditions
Rating
VPN
ID25
ID125
IDP
PD
VCC
VBS
VIN
TJ
TSTG
RθJC
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
TC = 25°C
TC = 125°C
TC = 25°C, PW < 100μs
TC = 25°C, Each FRFET
Applied between VCC and COM
Applied between VB(U)-U, VB(V)-V, VB(W)-W
Applied between IN and COM
250
4
1.6
8
14
20
20
-0.3 ~ VCC+0.3
-40 ~ 150
Storage Temperature
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
-50 ~ 150
8.8
VISO Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection pins
to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
Vrms
©2008 Fairchild Semiconductor Corporation
FSB50825US Rev. A
1
www.fairchildsemi.com
1 page  
VIN VIN
Irr
100% of ID
VDS
120% of ID
ID
10% of ID
ID VDS
tON trr
tOFF
(a) Turn-on
(b) Turn-off
Figure 4. Switching Time Definition
VCC
RBS
REH
VCC
HIN
LIN
COM
VB
HO
VS
LO
L
+
VDS
-
ID
VDC
CBS One-leg Diagram of SPM
Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)
www.DataSheet4U.com
Input Signal
UV Protection
Status
Low-side Supply, VCC
RESET
UVCCD
DETECTION
UVCCR
RESET
MOSFET Current
Figure 6. Undervoltage Protection (Low-side)
Input Signal
UV Protection
Status
High-side Supply, VBS
RESET
UVBSD
DETECTION
UVBSR
RESET
MOSFET Current
Figure 7. Undervoltage Protection (High-side)
FSB50825US Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSB50825US.PDF ] | |
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