파트넘버.co.kr ST93CS56 데이터시트 PDF


ST93CS56 반도체 회로 부품 판매점

(ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM



STMicroelectronics 로고
STMicroelectronics
ST93CS56 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ST93CS56
ST93CS57
2K (128 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS56
– 2.5V to 5.5V for the ST93CS57
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS56 and ST93CS57 are replaced by
the M93S56
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS56 and ST93CS57 are 2K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 2K bit memory is organized as 128 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S Chip Select Input
D Serial Data Input
Q Serial Data Output
C Serial Clock
PRE
W
Protect Enable
Write Enable
VCC Supply Voltage
VSS Ground
D
C
S
PRE
W
VCC
ST93CS56
ST93CS57
VSS
Q
AI00896B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/16


ST93CS56 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ST93CS56, ST93CS57
Figure 2A. DIP Pin Connections
ST93CS56
ST93CS57
S1
C2
8 VCC
7 PRE
D3
6W
Q4
5 VSS
AI00897B
Figure 2B. SO Pin Connections
ST93CS56
ST93CS57
S1
C2
8 VCC
7 PRE
D3
6W
Q4
5 VSS
AI00898C
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature
–40 to 85
°C
TSTG Storage Temperature
–65 to 150
°C
TLEAD Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°C
VIO Input or Output Voltages (Q = VOH or Hi-Z)
–0.3 to VCC +0.5
V
VCC Supply Voltage
–0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
3000
500
V
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 ).
3. EIAJ IC-121 (Condition C) (200pF, 0 ).
DESCRIPTION (cont’d)
The data is then clocked out serially. The address
pointer is automatically incremented after the data
is output and, if the Chip Select input (S) is held
High, the ST93CS56/57 can output a sequential
stream of data words. In this way, the memory can
be read as a data stream of 16 to 2048 bits, or
continuously as the address counter automatically
rolls over to 00 when the highest address is
reached. Within the time required by a program-
ming cycle (tW), up to 4 words may be written with
the help of the Page Write instruction; the whole
memory may also be erased, or set to a predeter-
mined pattern, by using the Write All instruction.
Within the memory, an user defined area may be
protected against further Write instructions. The
size of this area is defined by the content of a
Protect Register, located outside of the memory
array. As a final protection step, data may be per-
manently protected by programming a One Time
Programing bit (OTP bit) which locks the Protect
Register content.
Programming is internally self-timed (the external
clock signal on C input may be disconnected or left
running after the start of a Write cycle) and does
not require an erase cycle prior to the Write instruc-
tion. The Write instruction writes 16 bits at one time
into one of the 128 words, the Page Write instruc-
tion writes up to 4 words of 16 bits to sequential
locations, assuming in both cases that all ad-
dresses are outside the Write Protected area.
After the start of the programming cycle, a
Ready/Busy signal is available on the Data output
(Q) when the Chip Select (S) input pin is driven
High.
2/16




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ST93CS56

(ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM - STMicroelectronics



ST93CS57

(ST93CS56 / ST93CS57) 2K 128 x 16 SERIAL MICROWIRE EEPROM - STMicroelectronics