EIC1010-25 반도체 회로 부품 판매점
9.50-10.50 GHz 25-Watt Internally Matched Power FET
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 Excelics Semiconductor |
www.DataSheet4U.com
EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
FEATURES
• 10.0 – 10.25 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +44 dBm Output Power at 1dB Compression
• 7 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC1010-25
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
∆G
PAE
Id1dB
Output Power at 1dB Compression
f = 10.0-10.25GHz
VDS = 9 V, IDSQ ≈ 4000mA
Gain at 1dB Compression
f = 10.0-10.25GHz
VDS = 9 V, IDSQ ≈ 4000mA
Gain Flatness
f = 10.0-10.25GHz
VDS = 9 V, IDSQ ≈ 4000mA
Power Added Efficiency at 1dB Compression
VDS = 9 V, IDSQ ≈ 4000mA
f = 10.0-10.25GHz
Drain Current at 1dB Compression
f = 10.0-10.25GHz
43
6.5
44
7
33
6500
±0.6
7200
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
11 16
VP Pinch-off Voltage
VDS = 3 V, IDS = 130 mA
-2.5 -4.0
RTH Thermal Resistance2
1.4 1.8
1. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively
2. Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
38.5 dBm
175 oC
-65 to +175 oC
83W
CONTINUOUS2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
83W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revision 01
www.DataSheet4U.com
EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
freq (9.700GHz to 10.60GHz)
10
5
0
-5
-10
-15
-20
9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6
freq, GHz
Frequency
GHz
9.7
9.8
9.9
10
10.1
10.2
10.3
10.4
10.5
10.6
S11
MAG
ANG
0.542
21.8
0.457
9.2
0.349
-4.0
0.218
-15.3
0.077
-9.8
0.095
96.3
0.232
94.4
0.346
81.5
0.428
67.9
0.479
54.5
S21
MAG
ANG
0.104
-48.9
0.116
-65.0
0.127
-81.8
0.138 -100.3
0.143 -119.5
0.147 -139.0
0.144 -158.3
0.139 -176.3
0.132
166.7
0.125
150.6
S12
MAG
ANG
2.238
0.3
2.398
-15.2
2.551
-31.9
2.675
-50.2
2.731
-69.2
2.684
-89.1
2.597 -107.8
2.42 -126.4
2.212 -143.3
2.029 -159.8
S22
MAG
ANG
0.488
56.5
0.467
41.0
0.432
23.5
0.379
2.1
0.322
-23.9
0.264
-58.3
0.243
-99.5
0.265 -136.7
0.317 -165.0
0.377
174.3
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 9 V, IDSQ ≈ 4000mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revision 01
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