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160MT160KB 반도체 회로 부품 판매점

THREE PHASE BRIDGE



International Rectifier 로고
International Rectifier
160MT160KB 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Bulletin I27502 rev. A 05/03
THREE PHASE BRIDGE
MT..KB SERIES
Power Modules
Features
Package fully compatible with the industry standard INT-A-
pak power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio, outline for easy connections to
power transistor and IGBT modules
4000 VRMS isolating voltage
UL E78996 approved
Description
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy
duty applications.
Major Ratings and Characteristics
Parameters
130MT.KB 160MT.KB Units
IO
IFSM
I2t
I2t
VRRM
TSTG
TJ
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
range
range
range
130 (160) 160 (200)
85 (62)
85 (60)
1130
1430
1180
1500
6400
10200
5800
9300
64000
102000
800 to 1600
- 40 to 150
- 40 to 150
A
°C
A
A
A2s
A2s
A2s
V
°C
°C
www.irf.com
130 A
160 A
1


160MT160KB 데이터시트, 핀배열, 회로
www.DataSheet4U.com
130-160MT..KB Series
Bulletin I27502 rev. A 05/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VRRM , maximum repetitive
peak reverse voltage
V
80 800
100 1000
130-160MT..KB
120
140
160
1200
1400
1600
VRSM , maximum non-
repetitive peak rev. voltage
V
900
1100
1300
1500
1700
IRRM max.
@ TJ max.
mA
10
Forward Conduction
Parameter
130MT.KB 160MT.KB Units Conditions
IO Maximum DC output current
@ Case temperature
130 (160) 160 (200) A 120° Rect conduction angle
85 (62) 85 (60) °C
IFSM Maximum peak, one-cycle forward,
non-repetitive surge current
1130
1180
1430
1500
A t = 10ms No voltage
t = 8.3ms reapplied
I2t Maximum I2t for fusing
950
1000
64000
1200
1260
10200
t = 10ms 100% VRRM
t = 8.3ms reapplied Initial TJ = TJ max.
A2s t = 10ms No voltage
5800
9300
t = 8.3ms reapplied
4500
4100
7200
6600
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2t Maximum I2t for fusing
64000 102000 A2s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage
VF(TO)2 High level value of threshold voltage
rf1 Low level value of forward slope resistance
rf2 High level value of forward slope resistance
VFM Maximum forward voltage drop
0.78
0.99
4.59
4.17
1.63
0.81
1.04
3.52
3.13
1.49
V (16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max.
(I > π x IF(AV)), @ TJ max.
m(16.7% x π x IF(AV) < I < π x IF(AV)), @ TJ max.
(I > π x IF(AV)), @ TJ max.
V Ipk = 200A, TJ = 25°C, tp = 400µs single junction
VINS RMS isolation voltage
4000
4000
V TJ = 25°C, all terminal shorted
f = 50Hz, t = 1s
Thermal and Mechanical Specifications
Parameter
130MT.KB 160MT.KB Units Conditions
TJ Max. junction operating temperature range
Tstg Max. storage temperature range
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
T Mounting torque ± 10% to heatsink
to terminal
wt Approximate weight
-40 to 150
-40 to 150
0.16 0.12
0.93 0.73
0.18 0.15
1.08 0.88
0.03
4 to 6
3 to 4
176
°C
°C
K/W DC operation per module
DC operation per junction
120° Rect condunction angle per module
120° Rect condunction angle per junction
K/W Per module
Mounting surface smooth, flat and greased
Nm A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
g
2 www.irf.com




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