74HC2G66 반도체 회로 부품 판매점
Bilateral switches
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INTEGRATED CIRCUITS
DATA SHEET
74HC2G66; 74HCT2G66
Bilateral switches
Product specification
Supersedes data of 2003 Nov 26
2004 May 19
www.DPahtailSipheseSt4eUm.coicmonductors
Bilateral switches
Product specification
74HC2G66; 74HCT2G66
FEATURES
• Wide supply voltage range from 2.0 V to 9.0 V
• Very low ON-resistance:
– 41 Ω (typical) at VCC = 4.5 V
– 30 Ω (typical) at VCC = 6.0 V
– 21 Ω (typical) at VCC = 9.0 V.
• High noise immunity
• Low power dissipation
• ± 25 mA switch current
• SOT505-2 package
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 °C to +85 °C and
−40 °C to +125 °C.
DESCRIPTION
The 74HC2G66/74HCT2G66 is a high-speed Si-gate
CMOS device.
The 74HC2G66/74HCT2G66 provides a dual analog
switch. Each switch has two pins (nY and nZ) for input or
output and an active HIGH enable input (pin E). When
pin E is LOW, the belonging analog switch is turned off.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC2G HCT2G
tPZH/tPZL turn-on time nE to Vos
CL = 50 pF; RL = 1 kΩ; VCC = 4.5 V 12 13 ns
tPHZ/tPLZ turn-off time nE to Vos
CL = 50 pF; RL = 1 kΩ; VCC = 4.5 V 12 13 ns
CI input capacitance
3.5 3.5 pF
CPD power dissipation capacitance per switch notes 1 and 2
9 9 pF
CS switch capacitance
8 8 pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + (CL +CS) × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS = Switch capacitance in pF;
VCC = supply voltage in Volts.
2. For 74HC2G66 the condition is VI = GND to VCC.
For 74HCT2G66 the condition is VI = GND to VCC − 1.5 V.
2004 May 19
2
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74HC2G66 data
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국내 전력반도체 판매점
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관련 데이터시트
74HC2G66
Bilateral switches - NXP Semiconductors
74HC2G66
Bilateral switches - NXP Semiconductors