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PDF K4108 Data sheet ( Hoja de datos )
| Número de pieza | K4108 | |
| Descripción | MOSFET ( Transistor ) - 2SK4108 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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 1. 500V, N-Ch MOSFET - Toshiba  Hay una vista previa y un enlace de descarga de K4108 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK4108
www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)
z High forward transfer admittance : |Yfs| = 14 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS 500 V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
20 A
80 A
150 W
960 mJ
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
20
15
150
−55~150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-06-29
1 page  
www.DataSheet4U.com
2SK4108
SAFE OPERATING AREA
1000
100 ID max (pulse) *
ID max (continuous)
10 DC OPEATION
Tc = 25°C
1
1 ms *
100 μs *
0.1 ※ Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
1000
800
600
400
EAS – Tch
200
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 4.08 mH
Wave form
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2007-06-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K4108.PDF ] | |
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