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5N80 반도체 회로 부품 판매점

FKPF5N80



Fairchild Semiconductor 로고
Fairchild Semiconductor
5N80 데이터시트, 핀배열, 회로
www.DataSheet4U.com
FKPF5N80
Application Explanation
• Switching mode power supply, light dimmer, electric flasher unit
• TV sets, stereo, refrigerator, washing machine, bread maker
• Electric blanket, solenoid driver, small motor control
• Photo copier, electric tool
123
TO-220F
2
1: T1
2: T2
3: Gate
3
1
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage (Note1 )
Rating
800
Units
V
Symbol
Parameter
IT (RMS) RMS On-State Current
ITSM
Surge On-State Current
I2t I2t for Fusing
di/dt
PGM
PG (AV)
VGM
IGM
TJ
TSTG
Viso
Critical Rate of Rise of On-State Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Isolation Voltage
Conditions
Commercial frequency, sine full wave 360°
conduction, TC=104°C
Sinewave 1 full cycle, peak value, 50Hz
non-repetitive
60Hz
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=10ms
IG = 2x IGT, tr 100ns
Ta=25°C, AC 1 minute, T1 T2 G terminal to
case
Rating
5
Units
A
50
55
12.5
A
A
A2s
50
5
0.5
10
2
- 40 ~ 125
- 40 ~ 125
1500
A/µs
W
W
V
A
°C
°C
V
Thermal Characteristic
Symbol
Parameter
Rth(J-C) Thermal Resistance
Test Condition
Junction to case (Note 4)
Min.
-
Typ.
-
Max. Units
3.9 °C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004


5N80 데이터시트, 핀배열, 회로
www.DataESlheecett4rUi.ccoaml Characteristics TC=25°C unless otherwise noted
Symbol
IDRM
VTM
Parameter
Repetieive Peak Off-State Current
On-State Voltage
Test Condition
VDRM applied
TC=25°C, ITM=7.5A
Instantaneous measurement
I
VGT
Gate Trigger Voltage (Note 2)
II VD=12V, RL=20
III
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
I
IGT
Gate Trigger Current (Note 2)
II VD=12V, RL=20
III
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
VGD Gate Non-Trigger Voltage
TJ=125°C, VD=1/2VDRM
IH Holding Current
VD = 12V, ITM = 1A
IL Latching Current
I, III VD = 12V, IG = 1.2IGT
II
dv/dt
Critical Rate of Rise of
Off-State Voltag
VDRM = Rated, Tj = 125°C,
Exponential Rise
(dv/dt)C
Critical-Rate of Rise of Off-State
Commutating Voltage (Note 3)
Notes:
1. Gate Open
2. Measurement using the gate trigger characteristics measurement circuit
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below
4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
Min.
-
-
-
-
-
-
-
-
0.2
-
-
-
-
10
Typ.
-
-
Max.
20
1.5
Units
µA
V
- 1.5 V
- 1.5 V
- 1.5 V
- 20 mA
- 20 mA
- 20 mA
--V
- 30 mA
- 30 mA
- 50 mA
300 - V/µs
- - V/µs
VDRM
(V)
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKPF5N80
1. Junction Temperature
TJ=125°C
2. Rate of decay of on-state
commutating current
(di/dt)C = - 3.0A/ms
3. Peak off-state voltage
VD = 400V
Supply Voltage
Main Current
Main Voltage
(dv/dt)C
Time
(di/dt)C
Time
Time
VD
Quadrant Definitions for a Triac
(+) T2
T2 Positive
+
(+) T2
Quadrant II
IGT -
(-) IGT
GATE
T1
(-) T2
(+) IGT
GATE
T1
(-) T2
Quadrant III
(-) IGT
GATE
T1
(+) IGT
GATE
T1
-
T2 Negative
©2004 Fairchild Semiconductor Corporation
Quadrant I
+ IGT
Quadrant IV
Rev. A, April 2004




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