파트넘버.co.kr G30N60B3D 데이터시트 PDF


G30N60B3D 반도체 회로 부품 판매점

HGTG30N60B3D



Fairchild Semiconductor 로고
Fairchild Semiconductor
G30N60B3D 데이터시트, 핀배열, 회로
HGTG30N60B3D
www.DataSheet4U.com
Data Sheet
April 2004
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60B3D
TO-247
G30N60B3D
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
Symbol
C
G
E
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2


G30N60B3D 데이터시트, 핀배열, 회로
HGTG30N60B3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Cowllewcwto.Dr taotaESmhietteetr4VUo.cltoamge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG30N60B3D
600
60
30
25
220
± 20
± 30
60A at 600V
208
1.67
-55 to 150
260
4
10
UNITS
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
BVCES
ICES
VCE(SAT)
IC = 250µA, VGE = 0V
VCE = BVCES
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
600 -
--
--
- 1.45
- 1.7
-
250
3
1.9
2.1
Gate to Emitter Threshold Voltage
VGE(TH) IC = 250µA, VCE = VGE
4.2 5
6
Gate to Emitter Leakage Current
Switching SOA
IGES
VGE = ±20V
- - ±250
SSOA
TJ = 150oC, RG = 3Ω, VCE (PK) = 480V
VGE = 15V, L = 100µH VCE (PK) = 600V
200
60
-
-
-
-
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
- 7.2
-
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 3,
L = 1mH,
Test Circuit (Figure 19)
- 170 190
- 230 250
- 36
-
- 25
-
- 137
-
- 58
-
- 550 800
Turn-Off Energy (Note 3)
EOFF
- 680 900
V
µA
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D Rev. B2




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Fairchild Semiconductor

( fairchild )

G30N60B3D data

데이터시트 다운로드
:

[ G30N60B3D.PDF ]

[ G30N60B3D 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


G30N60B3

HGTG30N60B3 - Fairchild Semiconductor



G30N60B3D

HGTG30N60B3D - Fairchild Semiconductor