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PDF 6073A Data sheet ( Hoja de datos )

Número de pieza 6073A
Descripción 2N6073A
Fabricantes ON Semiconductor 
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No Preview Available ! 6073A Hoja de datos, Descripción, Manual

2N6071A/B Series
Preferred Device
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Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering: 4 Mode − 2N6071A, B; 2N6073A, B; 2N6075A, B
Blocking Voltages to 600 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
http://onsemi.com
TRIACS
4.0 A RMS, 200 − 600 V
MT2
MT1
G
3
21
REAR VIEW
SHOW TAB
TO−225
CASE 077
STYLE 5
MARKING DIAGRAM
1. Cathode
2. Anode
3. Gate
YWW
2N
607xyG
x = 1, 3, 5
y = A, B
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
1
Publication Order Number:
2N6071/D

1 page




6073A pdf
2N6071A/B Series
110
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100
α = 30°
90
a
80
α
60°
90°
120°
180°
dc
70 α = CONDUCTION ANGLE
0 1.0
2.0
3.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 1. Average Current Derating
4.0
110
α = 30°
60°
90°
100
90 120°
180°
a
80
a
dc
α = CONDUCTION ANGLE
70
0 1.0
2.0
3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 2. RMS Current Derating
4.0
8.0
a
a
6.0
α = CONDUCTION ANGLE
60°
4.0
α = 30°
120°
90°
180°
dc
2.0
8.0
a
6.0 a
α = CONDUCTION ANGLE
4.0
2.0
α = 180°
120°
dc
30°
60°
90°
00
0 1.0 2.0 3.0 4.0 0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
Figure 3. Power Dissipation
1.0 2.0 3.0
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 4. Power Dissipation
4.0
3.0 3.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0 2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.0 1.0
0.7 0.7
0.5 0.5
0.3
−60
−40 −20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate−Trigger Voltage
140
0.3
−60 −40
−20 0 20 40 60 80 100
TJ, JUNCTION TEMPERATURE (°C)
120 140
Figure 6. Typical Gate−Trigger Current
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