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PDF G50N60HS Data sheet ( Hoja de datos )
| Número de pieza | G50N60HS | |
| Descripción | SGW50N60HS | |
| Fabricantes | Infineon | |
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SGW50N60HS
www.DataSheet4U.com
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
Type
VCE
IC Eoff25 Tj
Marking
Package
SGW50N60HS
600V 50A 0.88mJ 150°C G50N60HS PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Avalanche energy single pulse
IC = 50A, VCC=50V, RGE=25Ω
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
100
50
150
150
280
±20
±30
10
416
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 June 06
1 page  
www.DataSheet4U.com
120A
90A
VGE=19V
15V
13V
11V
9V
7V
60A
30A
0A 0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
SGW50N60HS
120A
90A
VGE=19V
15V
13V
11V
9V
7V
60A
30A
0A 0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
5V
120A
90A
60A
30A TJ=150°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
4,0V
IC=100A
3,5V
3,0V
IC=50A
2,5V
2,0V
1,5V
IC=25A
1,0V
0,5V
0,0V
-50°C
Figure 8.
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.1 June 06
5 Page 
www.DataSheet4U.com
SGW50N60HS
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 12/7/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
11
Rev. 2.1 June 06
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