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Renesas Technology |
RJK0348DSP
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 2.6 mΩ typ. (at VGS = 10 V)
• Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1644-0201
Rev.2.01
Apr 24, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
22
176
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
22
22
48.4
2.5
50
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1644-0201 Rev.2.01 Apr 24, 2008
Page 1 of 6
RJK0348DSP
Electrical Characteristics
www.DataSheet4U.com
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.6
3.2
60
5100
980
315
1.4
34
12.5
7.0
13
5.8
69
10
0.78
35
Max
—
± 0.1
1
2.5
3.4
4.5
—
—
—
—
—
—
—
—
—
—
—
—
1.02
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 11 A, VGS = 10 V Note4
ID = 11 A, VGS = 4.5 V Note4
ID = 11 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 22 A
VGS = 10 V, ID = 11 A
VDD ≅ 10 V
RL = 0.91 Ω
Rg = 4.7 Ω
IF = 22 A, VGS = 0 Note4
IF = 22 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1644-0201 Rev.2.01 Apr 24, 2008
Page 2 of 6
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