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Renesas Technology |
RJK0328DPB
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 1.6 mΩ typ. (at VGS = 10 V)
• Pb-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
5
D
SSS
123
REJ03G1637-0400
Rev.4.00
Apr 10, 2008
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
60
240
60
30
90
65
1.93
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
Page 1 of 6
RJK0328DPB
Electrical Characteristics
www.DataSheet4IUte.cmom
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Qrr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.6
2.1
100
6380
1150
330
0.7
42
15
8.8
9.4
4.3
61.5
7.3
0.78
42
46
Max
—
±0.1
1
2.5
2.1
2.9
—
—
—
—
—
—
—
—
—
—
—
—
1.02
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 30 A, VGS = 10 V Note4
ID = 30 A, VGS = 4.5 V Note4
ID = 30 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 60 A
VGS = 10 V, ID = 30 A,
VDD ≅ 10 V, RL = 0.33 Ω,
Rg = 4.7 Ω
IF = 60 A, VGS = 0 Note4
IF = 60 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
Page 2 of 6
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