파트넘버.co.kr RJK0328DPB 데이터시트 PDF


RJK0328DPB 반도체 회로 부품 판매점

Silicon N Channel Power MOS FET Power Switching



Renesas Technology 로고
Renesas Technology
RJK0328DPB 데이터시트, 핀배열, 회로
RJK0328DPB
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 1.6 mtyp. (at VGS = 10 V)
Pb-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
5
D
SSS
123
REJ03G1637-0400
Rev.4.00
Apr 10, 2008
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
60
240
60
30
90
65
1.93
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
Page 1 of 6


RJK0328DPB 데이터시트, 핀배열, 회로
RJK0328DPB
Electrical Characteristics
www.DataSheet4IUte.cmom
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Qrr
Min
30
1.2
Typ
1.6
2.1
100
6380
1150
330
0.7
42
15
8.8
9.4
4.3
61.5
7.3
0.78
42
46
Max
±0.1
1
2.5
2.1
2.9
1.02
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 30 A, VGS = 10 V Note4
ID = 30 A, VGS = 4.5 V Note4
ID = 30 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 60 A
VGS = 10 V, ID = 30 A,
VDD 10 V, RL = 0.33 ,
Rg = 4.7
IF = 60 A, VGS = 0 Note4
IF = 60 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
Page 2 of 6




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: Renesas Technology

( renesas )

RJK0328DPB data

데이터시트 다운로드
:

[ RJK0328DPB.PDF ]

[ RJK0328DPB 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RJK0328DPB

Silicon N Channel Power MOS FET Power Switching - Renesas Technology



RJK0328DPB-01

Silicon N-Channel MOS FET - Renesas