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PDF K3326 Data sheet ( Hoja de datos )
| Número de pieza | K3326 | |
| Descripción | MOSFET ( Transistor ) - 2SK3326 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3326
Isolated TO-220
FEATURES
• Low gate charge :
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Avalanche capability ratings
• Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
500
±30
±10
±40
40
2.0
150
–55 to +150
10
10.7
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14204EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
2000
1 page  
2SK3326
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataSheetC4HUA.cNoNmEL TEMPERATURE
3.0
2.0
ID = 10 A
1.0 ID = 5.0 A
0.0
–50
VGS = 10 V
0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
10
Crss
1
0.1
1
10 100
VDS - Drain to Source Voltage - V
1000
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
900
800
di/dt = 50 A/µs
VGS = 0 V
700
600
500
400
300
200
100
0
0.1 1 10 100
IF - Drain Current - A
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
1 VGS = 10 V
0.1
VGS = 0 V
0.01
0.0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure14. SWITCHING CHARACTERISTICS
1000
tr
100
10
1
0.1
tf
td(on)
td(off)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1 10 100
ID - Drain Current - A
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
ID = 10 A
700 14
600 VDD = 400 V
250 V
500 100 V
400
300
12
VGS 10
8
6
200
VDS
100
4
2
0
0 5 10 15 20 25
QG - Gate Charge - nC
Data Sheet D14204EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3326.PDF ] | |
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