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STE53NC50



STMicroelectronics 로고
STMicroelectronics
53NC50 데이터시트, 핀배열, 회로
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STE53NC50
N-CHANNEL 500V - 0.070- 53A ISOTOP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STE53NC50
500V
< 0.08
53 A
n TYPICAL RDS(on) = 0.07
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n NEW HIGH VOLTAGE BENCHMARK
n GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
500
500
±30
53
33
212
460
3.68
3
2500
– 65 to 150
150
(1) ISD53A, di/dt100 A/µs, VDD24V, TjTjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/8


53NC50 데이터시트, 핀배열, 회로
STE53NC50
www.DataSheet4U.com
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthc-h
Thermal Resistance Case-heatsink with Conductive
Grease Applied
0.272
0.05
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
53
1043
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
°C/W
°C/W
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 27A
Min.
2
Typ.
3
0.07
Max.
4
0.08
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 15 A
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
Crss Reverse Transfer
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
42
11.2
1350
115
Max.
Unit
S
nF
pF
pF
2/8




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