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BDW84C 반도체 회로 부품 판매점

PNP SILICON POWER DARLINGTONS



Bourns Electronic Solutions 로고
Bourns Electronic Solutions
BDW84C 데이터시트, 핀배열, 회로
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
www.DataSheet4U.com
Designed for Complementary Use with
BDW83, BDW83A, BDW83B, BDW83C and
BDW83D
150 W at 25°C Case Temperature
15 A Continuous Collector Current
Minimum hFE of 750 at 3V, 6 A
B
C
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-15
-0.5
150
3.5
100
-65 to +150
-65 to +150
-65 to +150
V
V
V
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = -20 V.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1


BDW84C 데이터시트, 핀배열, 회로
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
www.DataSheet4U.com
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IC = -30 mA IB = 0
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VEB = -5 V
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -12 mA
IB = -150 mA
IE = -15 A
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = -6 A
IC = -15 A
IC = -6 A
IC = -6 A
IC = -15 A
IB = 0
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
-45
-60
-80
-100
-120
750
100
-1
-1
-1
-1
-1
-0.5
-0.5
-0.5
-0.5
-0.5
-5
-5
-5
-5
-5
-2
20000
-2.5
-2.5
-4
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
0.83 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = -10 A
VBE(off) = 4.2 V
IB(on) = -40 mA
RL = 3
IB(off) = 40 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.9 µs
7 µs
PRODUCT INFORMATION
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.




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