GW20NB60HD 반도체 회로 부품 판매점
STGW20NB60HD
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 STMicroelectronics |
www.DataSheet4U.com
®
STGW20NB60HD
N-CHANNEL 20A - 600V TO-247
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGW 20NB60HD 600 V < 2.8 V 20 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s WELDING EQUIPMENTS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
23
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VGE G ate-Emitter Voltage
IC Collector Current (continuous) at Tc = 25 oC
IC Collector Current (continuous) at Tc = 100 oC
ICM(•)
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
V a lu e
600
± 20
40
20
160
150
1 .2
-65 to 150
150
Unit
V
V
A
A
A
W
W /o C
oC
oC
June 1999
1/8
STGW20NB60HD
www.DataSheet4U.com
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-heatsink
Max
Max
Typ
0 .8 3
30
0. 1
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
V BR(CES)
ICES
IGES
Parameter
Collector-Emitt er
Breakdown Voltage
Collector cut-off
(VGE = 0)
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rat ing
VCE = Max Rat ing
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ.
Max.
U nit
V
250
2000
± 100
µA
µA
nA
ON (∗)
Symbol
VGE(th)
VCE(SAT )
Parameter
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
Min.
3
Typ.
Max.
5
U nit
V
VGE = 15 V IC = 20 A
VGE = 15 V IC = 20 A Tj = 125 oC
2.3 2.8
1.9
V
V
DYNAMIC
Symbol
gf s
Cies
Co es
Cres
QG
QGE
QGC
ICL
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE =25 V IC = 20 A
Min.
7.0
VCE = 25 V f = 1 MHz VGE = 0
1200
140
28
VCE = 480 V IC = 20 A VGE = 15 V
Vclamp = 480 V
Tj = 150 oC
RG=10 Ω 80
Typ.
10
1700
200
40
110
13
51
Max.
2200
260
52
145
U nit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
td(on)
tr
( di / dt ) o n
Eo n(r)
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 20 A
RG = 10Ω
VCC = 480 V
RG = 10 Ω
Tj = 125 oC
IC = 20 A
VGE = 15 V
Min.
Typ.
20
70
350
550
Max.
U nit
ns
ns
A/µs
µJ
2/8
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