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IKP03N120H2 반도체 회로 부품 판매점

HighSpeed 2-Technology



Infineon Technologies 로고
Infineon Technologies
IKP03N120H2 데이터시트, 핀배열, 회로
www.DataSheet4U.com
IKP03N120H2,
IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IKW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4595
IKP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4594
IKB03N120H2
1200V 3A
0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4597
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
9.6
3.9
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04


IKP03N120H2 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction - case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
IKP03N120H2,
IKW03N120H2
Symbol
Conditions
RthJC
RthJCD
RthJA
RthJA
P-TO-220-3-1
P-TO-247-3-1
P-TO-263 (D2PAK)
IKB03N120H2
Max. Value
2.0
3.2
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
VGE=0V, IC=300µA
VGE = 15V, IC=3A
Tj=25°C
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
VGE = 0, IF=2A
Tj=25°C
Tj=150°C
IC=90µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=3A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
P-TO-220-3-1
P-TO-247-3-1
min.
1200
-
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
2.0 2.5
1.75 -
3 3.9
µA
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
22 - nC
7 - nH
13
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 2, Mar-04




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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

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HighSpeed 2-Technology - Infineon Technologies