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Toshiba Semiconductor |
2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)
• Complementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−100
−100
−5
−7
−10
−0.7
2.0
30
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = −100 V, IE = 0
VEB = −5 V, IC = 0
IC = −50 mA, IB = 0
VCE = −3 V, IC = −3 A
VCE = −3 V, IC = −7 A
IC = −3 A, IB = −6 mA
IC = −7 A, IB = −14 mA
IC = −3 A, IB = −6 mA
2SB1020A
Min Typ. Max Unit
―
―
−100
2000
1000
―
―
―
― −100
― −4.0
――
― 15000
――
−0.95 −1.5
−1.3 −2.0
−1.55 −2.5
μA
mA
V
V
V
Turn-on time
Switching time Storage time
Fall time
ton
IB2
Output
― 0.8 ―
Input IB1
tstg
― 2.0 ―
μs
VCC ≈ −45 V
20 μs
tf
−IB1 = IB2 = 6 mA, duty cycle ≤ 1%
― 2.5 ―
Marking
B1020A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21
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