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Toshiba Semiconductor |
SM10LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM10LZ47
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 800V
l R.M.S. On−State Current
: IT (RMS) = 10A
l High Commutation (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
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MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off−State Voltage
R.M.S On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
IGM
Tj
Tstg
VISOL
800
10
100 (50Hz)
110 (60Hz)
50
50
5
0.5
10
2
−40~125
−40~125
1500
Note:
di / dt test condition
VDRM = 0.5 × Rated, ITM ≤ 15A, tgw ≥ 10µs,
tgr ≤ 250ns, igp = IGT × 2.0
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
1 2001-07-10
SM10LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
Gate Trigger Voltage
Gate Trigger Current
Peak On−State Voltage
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Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
I
II
III
I
II
III
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of Off−State Voltage
at Commutation
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
― ― 20 µA
VGT
VD = 12V,
RL = 20Ω
T2 (+) , Gate (+) ― ― 1.5
T2 (+) , Gate (−) ― ― 1.5 V
T2 (−) , Gate (−) ― ― 1.5
IGT
VD = 12V,
RL = 20Ω
T2 (+) , Gate (+) ― ― 30
T2 (+) , Gate (−) ― ― 30 mA
T2 (−) , Gate (−) ― ― 30
VTM
ITM = 15A
― ― 1.5 V
VGD
VD = Rated, Tc = 125°C
0.2 ― ― V
IH VD = 12V, ITM = 1A
― ― 50 mA
Rth (j−c)
dv / dt
Junction to Case, AC
VDRM = 600V, Tj = 125°C
Exponential Rise
― ― 3.4 °C / W
― 300 ― V / µs
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = − 5.5A / ms
10 ― ― V / µs
MARKING
NUMBER
SYMBOL
*1 TOSHIBA PRODUCT MARK
*2 TYPE
SM10LZ47
MARK
M10LZ47
Example
*3
8A: January 1998
8B: February 1998
8L: December 1998
2 2001-07-10
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