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ON1114 반도체 회로 부품 판매점

Photo lnterrupter



Panasonic Semiconductor 로고
Panasonic Semiconductor
ON1114 데이터시트, 핀배열, 회로
Transmissive Photosensors (Photo lnterrupters)
CNA1012K (ON1114)
Photo lnterrupter
For contactless SW, object detection
Unit: mm
Overview
CNA1012K is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element, and
a high sensitivity phototransistor is used as the light detecting ele-
ment. The two elements are arranged so as to face each other, and
objects passing between them are detected.
Features
Highly precise position detection: 0.3 mm
Wide gap between emitting and detecting elements, suitable for
www.DataSheetth4iUck.cpolmate detection
Fast response: tr , tf = 6 µs (typ.)
Small output current variation against change in temperature
Large output current
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Output (Photo Collector-emitter voltage
transistor) (Base open)
VR
IF
PD
VCEO
3
50
75
30
Unit
V
mA
mW
V
0.45±0.1
Mark for indicating
LED side
13.0±0.3
5.0±0.2
A
0.45±0.1
2-R0.5
A'
(10.0)
2-0.45±0.2
(2.54)
Device
center
SEC. A-A'
23
1: Anode
14
2: Cathode
3: Collector
4: Emitter
PISTR104-013 Package
(Note) ( ) Dimension is reference
Emitter-collector voltage VECO
(Base open)
5
V
Collector current
IC 20 mA
Collector power dissipation *2 PC
100 mW
Temperature Operating ambient temperature Topr 25 to +85 °C
Storage temperature
Tstg 30 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at
Ta 25°C.
*2: Output power derating ratio is 1.34 mW/°C
at Ta 25°C.
Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Forward voltage
characteristics Reverse current
Output Collector-emitter cutoff current
characteristics (Base open)
VF
IR
ICEO
IF = 50 mA
VR = 3 V
VCE = 10 V
1.2 1.5 V
10 µA
200 nA
Collector-emitter capacitance CC
Transfer Collector current
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time *
tr
Fall time *
tf
VCE = 10 V, f = 1 MHz
VCE = 10 V, IF = 20 mA
IF = 50 mA, IC = 0.1 mA
VCC = 10 V, IC = 1 mA
RL = 100
5 pF
0.7 mA
0.3 V
6 µs
6 µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
50
VCC
Sig. out
RL
(Input pulse)
(Output pulse)
tr : Rise time
90% tf : Fall time
10%
tr tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00019BED
1


ON1114 데이터시트, 핀배열, 회로
CNA1012K
IF , IC Ta
60
IF
50
40
30
IC
20
10
0
www.DataSheet4U.2c5om 0 20 40 60 80 100
Ambient temperature Ta (°C )
VF Ta
1.6
IF = 50 mA
1.2
10 mA
0.8
IF VF
IC IF
60 102
Ta = 25°C
VCE = 10 V
Ta = 25°C
50
10
40
30 1
20
10 1
10
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward voltage VF (V)
10 2
1
10 102
Forward current IF (mA)
103
IC VCE
IC Ta
102 160
Ta = 25°C
VCE = 10 V
IF = 20 mA
10
IF = 30 mA
120
20 mA
1
10 mA
80
0.4 10 1
40
0
40 0
40 80
Ambient temperature Ta (°C )
ICEO Ta
10
1
10 1
VCE = 24 V
10 V
10 2
10 3
10 4
40
0
40 80
Ambient temperature Ta (°C )
10 2
10 1
1
10 102
Collector-emitter voltage VCE (V)
0
40 0
40 80
Ambient temperature Ta (°C )
tr IC
IC d
103
VCC = 10 V
100
Ta = 25°C
80
102
RL = 1 k
500
10
60
VCE = 10 V
Ta = 25°C
IF = 20 mA
Criterion
0
d
100
40
1
20
10 1
10 2
10 1
1
Collector current IC (mA)
10
0
0123456
Distance d (mm)
2 SHG00019BED




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