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PDF P3057LS Data sheet ( Hoja de datos )
| Número de pieza | P3057LS | |
| Descripción | N-Channel Logic Level Enhancement FET | |
| Fabricantes | Niko | |
| Logotipo |  |
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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3057LS
TO-263
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 50mΩ
ID
12A
D
G
S
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Energy
L = 0.1mH
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
EAS
EAR
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
12
8
45
60
3
48
20
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
1
MAXIMUM
3
75
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
LIMITS
MIN TYP MAX
UNIT
25
0.8 1.2 2.5
V
±250 nA
25
µA
250
1 MAY-6-2003
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P3057LS.PDF ] | |
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