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SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD325
DESCRIPTION
·With TO-220C package
·Complement to type 2SB511
·Low collector saturation voltage
APPLICATIONS
www.DataSheet4·DU.ecosmigned for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current -peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
35
35
5
1.5
3.0
1.75
10
150
-50~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD325
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat
www.DataSheet4U.com
VBE
Collector-emitter saturation voltage IC=1.5A; IB=0.15A
Base-emitter on voltage
IC=1A ; VCE=5V
ICBO Collector cut-off current
VCB=20V; IE=0
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT Transition frequency
VEB=4V; IC=0
IC=1A ; VCE=2V
IC=0.1A ; VCE=2V
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
35 V
1.0 V
1.5 V
0.1 mA
1.0 mA
40 320
35
8 MHz
hFE-1 Classifications
CDE
F
40-80 60-120 100-200 160-320
2
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