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Número de pieza | FY8AAJ-03F | |
Descripción | High-Speed Switching Use Nch Power MOS FET | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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No Preview Available ! FY8AAJ-03F
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 4 V
• VDSS : 30 V
www.DataSheet•4U.crDomS(ON) (max) : 28 mΩ
• ID : 8 A
Outline
SOP-8
5
8
4
1
5,6,7,8
4
1,2,3
REJ03G0280-0100
Rev.1.00
Aug.20.2004
1,2,3. Source
4. Gate
5,6,7,8. Drain
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Ratings
30
±20
8
56
8
1.5
6.0
1.7
– 55 to +150
– 55 to +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 10 µH
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
1 page FY8AAJ-03F
On-State Resistance vs.
Channel Temperature (Typical)
101
7 VGS = 10V
5
4
ID = 8A
Pulse Test
3
2
100
7
5
4
3
2
www.DataSheet4U.com 10–1 –50
0
50 100 150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
Channel Temperature Tch (°C)
Switching Time Measurement Circuit
Vin Monitor
RGEN
D.U.T.
Vout
Monitor
RL
RGS
VDD
Threshold Voltage vs.
Channel Temperature (Typical)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50
0
50 100 150
Channel Temperature Tch (°C)
Transient Thermal Impedance Characteristics
102 D = 1.0
7
5 0.5
3
2 0.2
101 0.1
7
5
0.05
3 0.02
2
100 0.01
PDM
7
5 tw
3 Single Pulse
T
2
D
=
tw
T
10–110–4 2 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Pulse Width tw (s)
Switching Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.1.00, Aug.20.2004, page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FY8AAJ-03F.PDF ] |
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