파트넘버.co.kr BCR6AM 데이터시트 PDF


BCR6AM 반도체 회로 부품 판매점

MEDIUM POWER USE NON-INSULATED TYPE



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
BCR6AM 데이터시트, 핀배열, 회로
BCR6AM
www.DataSheet4U.com
MITSUBISHI SEMICONDUCTOR TRIAC
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
4
Dimensions
in mm
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
φ3.6±0.2
1.0
0.8
2.5 2.5 0.5 2.6
• IT (RMS) ........................................................................ 6A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
1 2 3 Measurement point of
case temperature
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
TO-220
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · washing machine · infrared kotatsu · carpet ·
electric fan,
solenoid drivers, small motor control, copying machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
6
60
15
5
0.5
10
2
–40 ~ +120
–40 ~ +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999


BCR6AM 데이터시트, 핀배열, 회로
MITSUBISHI SEMICONDUCTOR TRIAC
BCR6AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
www.DataSheet4UI.RcGoTm!
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
!
@
#
!
@
#
Tj=125°C, VDRM applied
Tc=25°C, ITM=9A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6, RG=330
Tj=25°C, VD=6V, RL=6, RG=330
Tj=125°C, VD=1/2VDRM
Junction to case V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
V5. High sensitivity (IGT20mA) is also available. (IGT item 1)
Limits
Min. Typ. Max.
Unit
— — 2.0 mA
— — 1.7
V
— — 1.5
V
— — 1.5
V
— — 1.5
V
— — 30 V5 mA
— — 30 V5 mA
— — 30 V5 mA
0.2 —
V
— — 2.5 °C/ W
V3 — — V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R—
L 10
R—
12 600
L 10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–3A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7
5
3
2
101
7
5
3
2
100
7
5 TC = 25°C
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999




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