파트넘버.co.kr X006 데이터시트 PDF


X006 반도체 회로 부품 판매점

0.8A SCRs



STMicroelectronics 로고
STMicroelectronics
X006 데이터시트, 핀배열, 회로
X006 Series
0.8A SCRs
SENSITIVE
Main features
Symbol
www.DataSheet4U.com
IT(RMS)
VDRM/VRRM
IGT
Value
0.8
600
60 to 200
Unit
A
V
µA
Description
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such
as ground fault circuit interrupters, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
A
G
K
KGA
TO-92
(X006xxA)
Order codes
Part Numbers
X00602MA 1AA2
X00602MA 2AL2
X00602MA 5AL2
X00602MN5BA4
X00605MA 1AA2
A
AG
K
SOT-223
(X006xxN)
Marking
X0602 MA
X0602 MA
X0602 MA
X06 2M
X0605 MA
August 2006
Rev 4
1/10
www.st.com


X006 데이터시트, 핀배열, 회로
Characteristics
1 Characteristics
X006 Series
Table 1.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
IT(RMS) RMS on-state current (180° conduction angle)
IT(AV) Average on-state current (180° conduction angle)
www.DataSheet4U.com
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
dI/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-92
Tl = 85° C
SOT-223 Ttab = 100° C
TO-92
Tl = 85° C
SOT-223 Ttab = 100° C
tp = 8.3 ms
Tj = 25° C
tp = 10 ms
tp = 10 ms Tj = 25° C
0.8
0.5
10
9
0.4
A
A
A
A2S
F = 60 Hz Tj = 125° C
50 A/µs
tp = 20 µs
Tj = 125° C
Tj = 125° C
1
0.1
- 40 to + 150
- 40 to + 125
A
W
°C
Table 2.
Symbol
Electrical characteristics
Test Conditions
X00602 X00605 Unit
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1 k
IG = 1 mA
RGK = 1 k
VD = 67% VDRM RGK = 1 k
ITM = 1 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 1 k
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
MIN.
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
15 30
200 60
0.8
0.2
5
5
6
25
1.35
0.85
245
1
100
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
2/10




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