K9F1G08U0A 판매점 - 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

K9F1G08U0A 반도체 회로 부품 판매점

128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

Samsung semiconductor

K9F1G08R0A

K9F1G08U0A K9K2G08U1A

Document Title

128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

FLASH MEMORY

Revision History

Revision No History

0.0

0.1

www.DataSheet4U.com

1. Initial issue

1. The tADL(Address to Data Loading Time) is added.

- tADL Minimum 100ns (Page 11, 23~26)

- tADL is the time from the WE rising edge of final address cycle

to the WE rising edge of first data cycle at program operation.

2. Added Addressing method for program operation

0.2 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.

0.3 1. PKG(TSOP1, WSOP1) Dimension Change

0.4 1. Technical note is changed

2. Notes of AC timing characteristics are added

3. The description of Copy-back program is changed

4. Voltage range is changed

-1.7V~1.95V -> 1.65V~1.95V

5. Note2 of Command Sets is added

0.5 1. CE access time : 23ns->35ns (p.11)

0.6 1. The value of tREA for 3.3V device is changed.(18ns->20ns)

2. EDO mode is added.

0.7 1. The flow chart to creat the initial invalid block table is cahnged.

Draft Date Remark

Aug. 24. 2003 Advance

Jan. 27. 2004 Preliminary

Apr. 23. 2004 Preliminary

May. 19. 2004 Preliminary

Jan. 21. 2005 Preliminary

Feb. 14. 2005 Preliminary

May. 24. 2005

May 6. 2005

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

K9F1G08R0A

K9F1G08U0A K9K2G08U1A

128M x 8 Bit /256M x 8 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F1G08R0A

K9F1G08U0A-Y,P

K9F1G08U0A-V,F

K9K2G08U1A-I

Vcc Range

1.65 ~ 1.95V

2.7 ~ 3.6V

Organization

FLASH MEMORY

PKG Type

Only available in MCP

TSOP1

WSOP1

52-ULGA

www.DataSheet4U.com

FEATURES

• Voltage Supply

-1.8V device(K9F1G08R0A): 1.65V~1.95V

-3.3V device(K9F1G08U0A): 2.7 V ~3.6 V

• Organization

- Memory Cell Array : (128M + 4,096K)bit x 8bit

- Data Register : (2K + 64)bit x8bit

- Cache Register : (2K + 64)bit x8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : 2K-Byte

- Random Read : 25µs(Max.)

- Serial Access : 30ns(Min.) - 3.3v device

50ns(Min.) -1.8v device

• Fast Write Cycle Time

- Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Cache Program Operation for High Performance Program

• Intelligent Copy-Back Operation

• Unique ID for Copyright Protection

• Package :

- K9F1G08U0A-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0A-VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1G08U0A-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0A-FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0A-V,F(WSOPI ) is the same device as

K9F1G08U0A-Y,P(TSOP1) except package type.

- K9K2G08U1A-ICB0/IIB0

52-ULGA (12X17X0.65mm)

GENERAL DESCRIPTION

Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution

for the solid state mass storage market. A program operation can be performed in typical 200µs on the 2112-byte page and an erase

operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V

device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip

write controller automates all program and erase functions including pulse repetition, where required, and internal verification and

margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0A′s extended reliability of 100K program/

erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solu-

tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

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제조업체: Samsung semiconductor

( samsung )

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K9F1G08U0A 반도체 회로 부품 판매점

128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

국내 전력반도체 판매점

일반적인 전자부품 판매점

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