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PDF P30N60T Data sheet ( Hoja de datos )
| Número de pieza | P30N60T | |
| Descripción | IGP30N60T | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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TrenchStop Series
IGP30N60T
IGW30N60T
Low Loss IGBT in Trench and Fieldstop technology
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www.DataSheet4U.com
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Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterruptible Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
P-TO-220-3-1
(TO-220AB)
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
P-TO-247-3-1
(TO-220AC)
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IGP30N60T 600V 30A
1.5V
175°C
G30T60
IGW30N60T 600V 30A
1.5V
175°C
G30T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
TO-220
TO-247
Ordering Code
Q67040S4722
Q67040S4724
Value
600
60
30
90
90
±20
5
187
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 Dec-04
1 page  
TrenchStop Series
IGP30N60T
IGW30N60T
80A
70A
60A
50A
40A
www.DataSheet4U.com 30A
VGE=20V
15V
13V
11V
9V
7V
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
VGE=20V
40A 15V
13V
30A 11V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
40A
30A
20A
10A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
1.5V
1.0V
IC=60A
IC=30A
IC=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.2 Dec-04
5 Page 
www.DataSheet4U.com
TrenchStop Series
IGP30N60T
IGW30N60T
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.2 Dec-04
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet P30N60T.PDF ] | |
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