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Renesas |
2SB562
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
www.Da•taSCheoemt4pUl.ecmomentary pair with 2SD468
Outline
TO-92MOD
ADE-208-1024 (Z)
1st. Edition
Mar. 2001
3
2
1
1. Emitter
2. Collector
3. Base
2SB562
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
–25
–20
–5
–1.0
–1.5
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
I CBO
hFE*1
Min
–25
–20
–5
—
85
Typ
—
—
—
—
—
Collector to emitter saturation
voltage
Base to emitter voltage
VCE(sat)
VBE
—
—
–0.2
–0.8
Gain bandwidth product
fT — 350
Collector output capacitance Cob — 38
Note: 1. The 2SB562 is grouped by hFE as follows.
BC
85 to 170 120 to 240
Max
—
—
—
–1.0
240
–0.5
–1.0
—
—
Unit
V
V
V
µA
V
V
MHz
pF
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
VCB = –20 V, IE = 0
VCE = –2 V,
IC = –0.5 A (Pulse test)
IC = –0.8 A,
IB = –0.08 A (Pulse test)
VCE = –2 V,
IC = –0.5 A (Pulse test)
VCE = –2 V,
IC = –0.5 A (Pulse test)
VCB = –10 V, IE = 0
f = 1 MHz
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