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PDF MG150Q2YS65H Data sheet ( Hoja de datos )
| Número de pieza | MG150Q2YS65H | |
| Descripción | High Power & High Speed Switching Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MG150Q2YS65H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MG150Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching
Applications
Unit: mm
· High input impedance
· Enhancement-mode
· The electrodes are isolated from case.
Equivalent Circuit
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E1
E2
C1 E2
G1 E1/C2 G2
JEDEC
JEITA
TOSHIBA
Weight: 255 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
¾
¾
Rating
1200
±20
150
300
150
300
890
150
-40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
V
N▪m
―
―
2-95A4A
1 2002-10-04
1 page  
1600
1200
VCE, VGE – QG
Common emitter
RL = 4 W
Tc = 25°C
VCE = 0
800
200 V 400 V 600 V
400
16
12
8
4
0
0 200
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400 600
Charge QG (nC)
800
1000
Short circuit SOA
6
5
4
3
2
VCC <= 900 V
1 Tj <= 125°C
tw = 5 ms
0
0 200 400 600 800 1000 1200 1400
Collector-emitter voltage VCE (V)
MG150Q2YS65H
100000
C – VCE
10000
Cies
Coes
Cres
1000
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
100
0.01
0.1
1
10
Collector-emitter voltage VCE (V)
100
1000
100
10
Reverse bias SOA
1
Tj <= 125°C
VGE = ±15 V
RG = 5.6 W
0.1
0
500
1000
Collector-emitter voltage VCE (V)
1500
Rth (t) – tw
1
Diode stage
0.1
Transistor stage
0.01
Tc = 25°C
0.001
0.001
0.01
0.1
1
Pulse width tw (s)
10
5
2002-10-04
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MG150Q2YS65H.PDF ] | |
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