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Número de pieza | FW341 | |
Descripción | General-Purpose Switching Device | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FW341 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENN7922
FW341
FW341
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
www.DataSheet4U• .cLomow ON-resistance.
• Ultrahigh-speed switching.
• Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
• High-density mounting.
• Best suited for motor drive application.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
Total Dissipation
Channel Temperature
Storage Temperature
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(2000mm2!0.8mm)1unit
Mounted on a ceramic board
(2000mm2!0.8mm)
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W341
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
ID=1.8A, VGS=4V
N-channel
30
±20
3.5
4
6
14
P-channel
--30
±20
--2.5
--3
--4.5
--10
1.4
Unit
V
V
A
A
A
A
W
1.7
150
--55 to +150
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.2 2.6 V
3.0 5.3
S
64 84 mΩ
105 150 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-100623 No.7922-1/6
1 page FW341
RDS(on) -- VGS
[Pch]]
500
Ta=25°C
450
400
350
300 --2.5A
250 ID= --1.0A
200
150
100
50
www.DataSheet4U.com --2
10
7
5
--3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V
yfs -- ID
IT07523
[Pch]
VDS= --10V
3
2 25°C
1.0
7
Ta= --25°C 75°C
5
3
2
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
2
VDD= --15V
100 VGS= --10V
7
5
23
5 7 --10
IT03216
[Pch]
3 td(off)
2
10 td(on)
7
5
3
2
tf
tr
1.0
--0.1
23
5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
--10
VDS= --10V
--9 ID= --2.5A
--8
2
35
IT03218
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0123456
Total Gate Charge, Qg -- nC
IT03220
RDS(on) -- Ta
[Pch]
400
350
300
250
ID= --1.0A, VGS= --4V
200
150 ID= --2.5A, VGS= --10V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07524
IF -- VSD
[Pch]
--10
7 VGS=0
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
3
2
--0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Diode Forward Voltage, VSD -- V IT03217
Ciss, Coss, Crss -- VDS
[Pch]
f=1MHz
Ciss
100
7
5
Coss
3 Crss
2
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT03219
ASO
[Pch]
2
IDP= --10A
--10
<10µs
7
5
3 ID= --2.5A
2
--1.0
7
5
3
2
1m1s00µs
DC1o0p0emrastio1n0ms10s
--0.1 Operation in this
7 area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (2000mm2!0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3
5
Drain-to-Source Voltage, VDS -- V IT07525
No.7922-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FW341.PDF ] |
Número de pieza | Descripción | Fabricantes |
FW340 | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | Sanyo Semicon Device |
FW341 | General-Purpose Switching Device | Sanyo Semicon Device |
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