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C4115S 반도체 회로 부품 판매점

NPN Transistor - 2SC4115S



Jiangsu Changjiang Electronics 로고
Jiangsu Changjiang Electronics
C4115S 데이터시트, 핀배열, 회로
Transistors
2SC4115S
Low Frequency Transistor (20V, 3A)
2SC4115S
zFeatures
1) Low VCE(sat).
www.DataSheet4U.com VCE(sat) = 0.2V(Typ.)
IC / IB = 2A / 0.1A
2) Excellent current gain
characteristics.
3) Complements the 2SA1585S.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2SC4115S
4±0.2
2±0.2
0.45+−00..1055
2.5+−00..41
5
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
Denotes hFE
0.5
0.45
+0.15
0.05
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
Junction temperature
Storage temperature
Single pulse Pw=10ms
PC
Tj
Tstg
Limits
40
20
6
2
5
0.4
150
55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
Rev.A
1/3


C4115S 데이터시트, 핀배열, 회로
Transistors
2SC4115S
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
www.DataSheet4U.comDC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
40
20
6
120
Typ.
0.2
290
25
Max.
0.1
0.1
0.5
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
VCE=2V, IC=0.1A
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Type
Package
Code
Basic ordering
hFE unit (pieces)
Taping
TP
5000
2SC4115S QRS
hFE values are classified as follows :
Item Q R S
hFE 120 to 270 180 to 390 270 to 560
zElectrical characteristic curves
10
VCE=2V
5
2
1
0.5 Ta=100°C
25°C
0.2 40°C
0.1
0.05
0.02
0.01
5m
2m
1m
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
2
20mA
18mA
16mA
1.6 14mA
1.2
0.8
0.4
12mA
Ta=25°C
10mA
8mA
6mA
4mA
2mA
0 IB=0A
0 0.2 0.4 0.6 0.8 1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
5 50mA
45mA
40mA
4
3
2
1
35mA Ta=25°C
30mA
25mA
20mA
15mA
10mA
5mA
0 IB=0A
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
Rev.A
2/3




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C4115S transistor

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