P40NF10L 반도체 회로 부품 판매점
STP40NF10L
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 STMicroelectronics |
STP40NF10L
N-CHANNEL 100V - 0.028Ω - 40A TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP40NF10L
100 V < 0.033 Ω
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.028Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
40 A
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
s AUTOMOTIVE
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
June 2002
Value
100
100
± 17
40
25
160
150
1
430
–65 to 175
175
(1) Starting Tj = 25°C, ID = 20A, VDD = 40V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
1/8
STP40NF10L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
1
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
www.DataSheet4U.coVm(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 17V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20 A
VGS = 5V, ID = 20 A
Min.
1
Typ.
1.7
0.028
0.030
Max.
2.5
0.033
0.036
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15V, ID = 20 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
25
2300
290
125
Max.
Unit
S
pF
pF
pF
2/8
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