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K9F1208D0A 반도체 회로 부품 판매점

(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory



Samsung semiconductor 로고
Samsung semiconductor
K9F1208D0A 데이터시트, 핀배열, 회로
www.DataSheet4U.com
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
0.1 TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm
(after ) To Be Decided.
0.2 TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm, to
(after) 8.5 x 15 /0.8mm pitch, Width 1.0mm
Draft Date
Apr. 25th 2002
May. 9th 2002
Remark
Preliminary
July, 10th 2002
0.3 Pin numbering includes TBGA Dummy ball . (Page5)
Aug, 10th 2002
0.4 Pin numbering excludes TBGA Dummy ball . (Page5)
Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
Oct, 21th 2002
0.5
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 43)
Nov, 21th 2002
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 44)
0.6 The min. Vcc value 1.8V devices is changed.
K9F1208Q0A : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 5th 2003
0.7 Pb-free Package is added.
K9F1208U0A-FCB0,FIB0
K9F1208Q0A-HCB0,HIB0
K9F1216U0A-HCB0,HIB0
K9F1216U0A-PCB0,PIB0
K9F1216Q0A-HCB0,HIB0
K9F1208U0A-HCB0,HIB0
K9F1208U0A-PCB0,PIB0
Mar. 13rd 2003
0.8 Errata is added.(Front Page)-K9F1208Q0A
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification 45 15 25 50 15 25 30 45
Relaxed value 60 20 40 60 20 40 40 55
Mar. 17th 2003
0.9 New definition of the number of invalid blocks is added.
Apr. 4th 2003
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
1.0 1. 2.65V device is added.
2. Note is added.
Jul. 4th 2003
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1


K9F1208D0A 데이터시트, 핀배열, 회로
www.DataSheet4U.com
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
1.1 Errata is deleted.
AC parameters are changed.-K9F1208Q0A
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45
After 60 20 40 60 20 40 40 55
Draft Date
Aug. 1st 2003
1.2 1. K9F1208Q0A-DC(I)B0,K9F1216Q0A-DC(I)B0, K9F1208D0A-DC(I)B0, Oct. 14th 2003
K9F1216D0A-DC(I)B0,K9F1208U0A-DC(I)B0, K9F1216U0A-DC(I)B0 are
deleted.
1.3 1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
Apr. 24th 2004
Remark
1.4 1. PKG(TSOP1, WSOP1) Dimension Change
May. 24th 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2




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