파트넘버.co.kr R1004 데이터시트 PDF


R1004 반도체 회로 부품 판매점

GaAs MMIC



Mimix Broadband 로고
Mimix Broadband
R1004 데이터시트, 핀배열, 회로
www.DataSheet4U.com
30.0-46.0 GHz GaAs MMIC
Receiver
August 2006 - Rev 01-Aug-06
Features
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
R1004
MGimeixnBeroraadblaDnd’es 3s0c.0r-4i6p.0tGiHoznGaAs MMIC receiver has a noise
figure of 3.5 dB and 18.0 dB image rejection across the band.This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO doubler and LO buffer
amplifer.The image reject mixer eliminates the need for a bandpass
filter after the LNA to remove thermal noise at the image frequency.
The use of integrated LO doubler and LO buffer amplifier makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband.This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110, 180 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 35.0 - 46.0
Frequency Range (RF) Lower Side Band
GHz 30.0 - 46.0
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)2
LO Input Drive (PLO)
Image Rejection2
Noise Figure (NF)2
GHz 15.5 - 25.0
GHz DC - 4.0
dB - 10.0 -
dB - 9.0 -
dBm - +2.0 -
dBc - 18.0 -
dB - 3.5 -
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)1,2
dB
dBm
- 40.0/40.0 -
- +4.0 -
Drain Bias Voltage (Vd1,2,3)
VDC - +4.0 +5.5
Gate Bias Voltage (Vg1,2,3)
VDC -1.2 -0.3 +0.1
Gate Bias Voltage (Vg4,5) Mixer, Doubler
Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical)
VDC -1.2 -0.5 +0.1
mA -
50 100
mA - 145 165
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 and +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


R1004 데이터시트, 핀배열, 회로
www.DataSheet4U.com
30.0-46.0 GHz GaAs MMIC
Receiver
August 2006 - Rev 01-Aug-06
Receiver Measurements
R1004
XR1004 Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, USB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0
RF Frequency (GHz)
Max Median Mean -3sigma
XR1004 Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, LSB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0
RF Frequency (GHz)
Max Median Mean -3sigma
XR1004 Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, USB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
0
-5
-10
-15
-20
-25
-30
-35
-40
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0
RF Frequency (GHz)
Max Median Mean -3sigma
XR1004 Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, LSB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
0
-5
-10
-15
-20
-25
-30
-35
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0
RF Frequency (GHz)
Max Median Mean -3sigma
24
22
20
18
16
14
12
10
8
6
4
2
0
32
40REC0452 (LSB, IF = 2 GHz, Pout_scl = -9 dBm): aver OIP3 vs RF
LO = -2 dBm (red) and +2 dBm (blue). 5 devices measured
33 34 35 36 37 38 39
RF Freq (GHz)
40
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.




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