K2027 반도체 회로 부품 판매점
MOSFET ( Transistor ) - 2SK2027
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 Fuji Electric |
www.DataSheet4U.com
2SK2027-01
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
600
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
V DGR
ID
600
8
Pulsed Drain Current
I D(puls)
32
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
600V 1,2Ω 8A 80W
> Outline Drawing
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=600V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4A
VGS=10V
Forward Transconductance
g fs ID=4A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=8A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10 Ω
I AV L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
600
2,5
4
8
Typ. Max.
3,0
10
0,2
10
1,0
8
1500
140
30
20
30
90
50
3,5
500
1,0
100
1,2
2200
210
45
30
45
135
75
8
32
1,0 1,5
450
3
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
1,56 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
www.DataSheet4U.com
N-channel MOS-FET
600V 1,2Ω 8A 80W
> Characteristics
Typical Output Characteristics
2SK2027-01
FAP-IIA Series
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
↑1
↑2
↑3
→VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
→Tch [°C]
Typical Forward Transconductance vs. ID
→VGS [V]
Gate Threshold Voltage vs. Tch
↑4
↑5
↑6
→ID [A]
Typical Capacitance vs. VDS
→ID [A]
Typical Input Charge
→Tch [°C]
Forward Characteristics of Reverse Diode
↑7
↑8
↑↑
9
→VDS [V]
Allowable Power Dissipation vs. TC
↑ 10
↑
→Qg [nC]
Safe operation area
↑
12
→VSD [V]
Transient Thermal impedance
11
→Tc [°C]
→VDS [V]
This specification is subject to change without notice!
t [s] →
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K2027 data
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