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Sanyo Semicon Device |
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Features
• Low ON resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
3LN02N
N-Channel Silicon MOSFET
3LN02N
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2178
5.0 [3LN02N]
4.0 4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta=25°C
123
1.3 1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Ratings
30
±10
0.3
1.2
0.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : YD
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
min
30
0.4
0.4
Ratings
typ
max
Unit
V
10 µA
±10 µA
1.3 V
0.56
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2952 No.6549-1/4
3LN02N
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Sourse on-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ”Miller” Charge
Diode Forward Voltage
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0
Switching Time Test Circuit
4V VIN
0V
VIN
PW=10µs
D.C.≤1%
VDD=15V
ID=150mA
RL=100Ω
D VOUT
G
3LN02N
P.G 50Ω S
Ratings
min typ max
Unit
0.9 1.2 Ω
1.2 1.7 Ω
2.6 5.2 Ω
30 pF
15 pF
10 pF
32 ns
110 ns
250 ns
160 ns
2.34
nC
0.38
nC
0.45
nC
0.8 1.2 V
0.30
3.5V
4.0V
0.25
ID -- VDS
3.0V
0.20
0.15
0.10 VGS=1.5V
0.05
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT00224
RDS(on) -- VGS
3.0
Ta=25°C
2.5
2.0
1.5
ID=150mA
80mA
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT00226
0.6
VDS=10V
0.5
ID -- VGS
0.4
0.3
0.2
0.1
0
0
10
7
5
3
2
1.0
7
5
3
2
0.1
0.01
0.5 1.0 1.5 2.0 2.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
IT00225
VGS=4V
25°C
Ta=75°C
--25°C
23
5 7 0.1
23
Drain Current, ID -- A
5 7 1.0
IT00227
No.6549-2/4
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