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FD0200YR 반도체 회로 부품 판매점

DIAC



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FD0200YR 데이터시트, 핀배열, 회로
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FD0200YR
DIAC
Dimensions in mm.
DO-35
Glass Axial
Package
Silicon bi-directional trigger device
intended for use in thyristor (SCR and
TRIAC) trigger circuits, energy saving
lighting circuits and other switching
functions.
3.60 ± 0.55
54.4 ± 0.55
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 250 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
BREAKOVER VOLTAGE ON-STATE CURRENT
32 V 2.0 Amps
SPECIAL FEATURES:
• Low breakover current.
• Excellent symmetry.
• Very low leakage current.
MARKING CODE
P1
Absolute Maximum Ratings, according to IEC publication No. 134
PARAMETER
CONDITIONS
Ptot Total Power Dissipation
Ta = 65 ºC
ITRM Repetitive peak on-state current tp = 20 µs, f = 100 Hz
Tstg Storage Temperature Range
Tj Operating Junction Temperature
Min. Typ. Max. Unit
150 mW
2A
-40 +125 ºC
-40 +125 ºC
Thermal Resistance
R th (j-a)
R th (j-l)
PARAMETER
Junction to Ambient
Junction to leads
CONDITIONS
Min. Typ. Max. Unit
400 ºC/W
150 ºC/W
Electrical Characteristics at Tamb = 25 ºC
VBO
VBO+ - -VBO-
V±
PARAMETER
Breakover Voltage *
Breakover Voltage Symmetry
Dynamic breakover voltage *
VO Output Voltage *
IBO Breakover Current *
tr Rise Time *
IB Leakage Current *
IP Peak Current *
* Applicable to both forward and reverse directions.
** Connected in parallel with the devices.
CONDITIONS
Min. Typ. Max. Unit
IBO, C = 22nF ** (see Figure 1)
IBO, C = 22nF ** (see Figure 1)
I = [IBO to IF = 10 mA]
(see Figure 1)
28
5
32 36
±3
V
V
V
(see Figure 3)
5
V
C = 22 nF **
(see Figure 4)
50 µA
1.5 µs
VB = 0.5 VBO max
(see Figure 1)
10 µA
see Figure 3 (Gate)
0.3
A
Feb - 03


FD0200YR 데이터시트, 핀배열, 회로
FD0200YR
+IF
10mA
+VBO
0
IBO
-V IB
-VBO
+V
0.5VBO
V
VBO
+IBO
0
-IBO
-IF
FIGURE 1: Current-Voltage Characteristics
FIGURE 2
V+
V-
DIAC
t
t
10K
500K
220 VAC
50Hz
0.1 µF
D.U.T.
VO
FIGURE 3: Test Circuit for Output Voltage.
PART NUMBER INFORMATION
90 %
Ip
R = 20
10 %
tr
FIGURE 4: Test circuit see Figure 3. Adjust R for Ip = 0.5 A
FAGOR
DIAC
CURRENT
F D 02
00 Y R 00 AM
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Feb - 03




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