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BD3509MUV 반도체 회로 부품 판매점

Nch FET Ultra LDO



ROHM Semiconductor 로고
ROHM Semiconductor
BD3509MUV 데이터시트, 핀배열, 회로
High Performance Regulators for PCs
Nch FET Ultra LDO for PC Chipsets
BD3508MUV
Nch FET Ultra LDO for PC Chipsets
with Power Good
BD3509MUV
No.10030ECT22
Description
The BD3508MUV / BD3509MUV ultra low-dropout linear chipset regulator operates from a very low input supply, and offers
ideal performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power
transistor to minimize the input-to-output voltage differential to the ON resistance (RON MAX=100mΩ/50mΩ) level. By
lowering the dropout voltage in this way, the regulator realizes high current output (Iomax=3.0A/4.0A) with reduced
conversion loss, and thereby obviates the switching regulator and its power transistor, choke coil, and rectifier diode. Thus,
the BD3508MUV / BD3509MUV are designed to enable significant package profile downsizing and cost reduction. An
external resistor allows the entire range of output voltage configurations between 0.65 and 2.7V, while the NRCS (soft start)
function enables a controlled output voltage ramp-up, which can be programmed to whatever power supply sequence is
required.
Features
1) Internal high-precision reference voltage circuit (0.65V±1%)
2) Built-in VCC under voltage lock out circuit (VCC=3.80V)
3) NRCS (soft start) function reduces the magnitude of in-rush current
4) Internal Nch MOSFET driver offers low ON resistance (65mΩ/28mΩ typ)
5) Built-in current limit circuit (3.0A/4.0A min)
6) Built-in thermal shutdown (TSD) circuit
7) Variable output (0.652.7V)
8) Incorporates high-power VQFN020V4040 package: 4.0×4.0×1.0(mm)
9) Tracking function
Applications
Notebook computers, Desktop computers, LCD-TV, DVD, Digital appliances
Model Lineup
Maximum output current
3A
4A
Package
VQFN020V4040
VCC=5V
BD3508MUV
BD3509MUV
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/20
2010.04 - Rev.C


BD3509MUV 데이터시트, 핀배열, 회로
BD3508MUV,BD3509MUV
Technical Note
Absolute Maximum Ratings (Ta=100)
BD3508MUV / BD3509MUV
Parameter
Input Voltage 1
Input Voltage 2
Input Voltage 3
Symbol
VCC
VIN
VDD
Ratings
BD3508MUV BD3509MUV
6.0 *1
6.0 *1
- 6.0*1
Unit
V
V
V
Enable Input Voltage
Ven
6.0 V
Power Good Input Voltage
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
VPGOOD
Pd1
Pd2
Pd3
Pd4
- 6.0
0.34 *2
0.70 *3
1.21 *4
3.56 *5
V
W
W
W
W
Operating Temperature Range
Topr
-10 ~ +100
Storage Temperature Range
Tstg
-55 ~ +125
Maximum Junction Temperature
Tjmax
+150
*1 Should not exceed Pd.
*2 Reduced by 4mW/for each increase in Ta25(no heat sink)
*3 1 layer, mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm2)
*4 4 layers, mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm2) , copper foil in each layers.
*5 4 layers, mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB (Copper foil area : 5505mm2) , copper foil in each layers.
Operating Conditions(Ta=25)
Parameter
Symbol
BD3508MUV
Min Max
Input Voltage 1
Input Voltage 2
VCC
VIN
4.3
0.75
5.5
VCC-1 *6
Input Voltage 3
VDD
-
-
Output Voltage setting Range Vo VFB
2.7
Enable Input Voltage
Ven -0.3
5.5
NRCS capacity
CNRCS
0.001
1
*6 VCC and VIN do not have to be implemented in the order listed.
This product is not designed for use in radioactive environments.
BD3509MUV
Min Max
4.3 5.5
0.7 VCC-1 *6
2.7 5.5
VFB 2.7
-0.3 5.5
0.001
1
Unit
V
V
V
V
V
µF
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
2/20
2010.04 - Rev.C




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Nch FET Ultra LDO - ROHM Semiconductor