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ST Microelectronics |
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MD1802FX
High voltage NPN Power transistor for standard
Definition CRT display
Preliminary Data
General features
■ State-of-the-art technology:
– Diffused collector “Enhanced generation”
■ More stable performances versus operating
temperature variation
■ Low base-drive requirements
■ Tighter hFE range at operating collector current
■ High ruggedness
■ Fully insulated power package U.L. compliant
■ In compliance with the 2002/93/EC European
directive
3
2
1
ISOWATT218FX
Applications
■ Horizontal deflection output for TV
■ Switch mode power supplies for CRT TV
Internal schematic diagram
Description
The MD1802FX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
Order codes
Part Number
Marking
MD1802FX
MD1802FX
Package
ISOWATT218FX
Packing
Tube
August 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical ratings
1 Electrical ratings
MD1802FX
Table 1. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
PTOT
Vins
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc = 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case _______________max
Value
1500
700
9
10
15
5
57
2500
-65 to 150
150
Value
2.2
Unit
V
V
V
A
A
A
W
V
°C
Unit
°C/W
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