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TYNx10 반도체 회로 부품 판매점

(TYN810) 10A SCR



STMicroelectronics 로고
STMicroelectronics
TYNx10 데이터시트, 핀배열, 회로
®
STANDARD
Table 1: Main Features
Symbol
Value
IT(RMS)
10
VDRM/VRRM
400, 600 and 800
IGT 15
Unit
A
V
mA
TYNx10 Series
10A SCR
A
G
K
A
DESCRIPTION
The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.
This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resis-
tive or inductive load.
www.DataSheet4U.com
K
A
G
TO-220AB
Table 2: Order Codes
Part Numbers
TYN410RG
TYN610RG
TYN810RG
Marking
TYN410
TYN610
TYN810
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
IT(RMS) RMS on-state current (180° conduction angle)
Tc = 100°C
IT(AV) Average on-state current (180° conduction angle)
Tc = 100°C
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
Tj = 25°C
I²t I²t Value for fusing
tp = 10 ms Tj = 25°C
dI/dt
Critical rate of rise of on-state current
IG = 100 mA , dIG/dt = 0.1 A/µs
Tj = 125°C
IGM Peak gate current
tp = 20 µs Tj = 125°C
PG(AV) Average gate power dissipation
Tj = 125°C
PGM Maximum gate power
tp = 20 µs Tj = 125°C
VDRM
VRRM
Repetitive peak off-state voltage
TYN410
TYN610
TYN810
Tj = 125°C
Tstg Storage junction temperature range
Tj Operating junction temperature range
TL Maximum lead temperature for soldering during 10s at 2mm from case
Value
10
6.4
105
100
50
50
4
1
10
400
600
800
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A
A2S
A/µs
A
W
W
V
°C
°C
February 2006
REV. 2
1/6


TYNx10 데이터시트, 핀배열, 회로
TYNx10 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VD = 12 V (D.C.) RL = 33
MAX.
MAX.
VGD VD = VDRM RL = 3.3 k
Tj = 110°C MIN.
tgt VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs
TYP.
IH IT = 100 mA Gate open
MAX.
IL IG = 1.2 x IGT
TYP.
dV/dt
Linear slope up to:
VD = 67 % VDRM Gate open
Tj = 110°C MIN.
VTM ITM = 20 A tp = 380 µs
MAX.
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 110°C
MAX.
tq
VD = 67 % VDRM
dITM/dt = 30 A/µs
ITM = 20 A VR = 25 V
dVD/dt = 50 V/µs
Tj = 110°C
TYP.
Table 5: Thermal Resistance
Symbol
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient
Parameter
Value
15
1.5
0.2
2
30
50
200
1.6
10
2
70
Unit
mA
V
V
µs
mA
mA
V/µs
V
µA
mA
µs
Value Unit
2.5 °C/W
60 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
12
10 α = 180°
α = 120°
8 α = 90°
α = 60°
6
α = 30°
4
2
IT(AV)(A)
0
01 2 3 456
DC
360°
α
78
9
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead)
P(W)
12
α = 180°
10
8
6
4
2
0
0 20
Rth = 6°C/W
Rth = 4°C/W
Rth = 2°C/W
Tcase(°C)
Rth = 0°C/W
100
105
110
115
120
Tamb(°C)
125
40 60 80 100 120 140
2/6




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