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Tyco Electronics |
GaAs SPDT Reflective Switch, DC - 3
GHz with TTL/CMOS Control Input V 3.00
Features
n Integral TTL Driver
n Ultra Low Power Consumption
n Fast Switching Speed: 7 ns Typical
n Surface Mount Package
n 50 Ohm Nominal Impedance
n MIL-STD-883 Screening Available
Description
M/A-COM’s SW-312 is a GaAs FET SPDT reflective
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device
offers excellent performance and repeatability from DC
to 3 GHz while maintaining low power consumption.
The SW-312 is ideally suited for use where fast speed,
low power consumption and broadband applications are
required. MIL-STD-883 screening available.
CR-9
Electrical Specifications1,2
(From –55°C to +85°C)
Parameter
Insertion Loss
Test Conditions
—
VSWR
—
Isolation
—
Trise, Tfall
Ton, Toff
Transients
1 dB Compression
10% to 90%
1.3V CTL to 90% / 10%
In-Band
Input Power
IP2 Two-Tone Input Power up to +5 dBm
IP3 Two-Tone Input Power up to +5 dBm
Vin Low
Vin High
0V to 0.8V
2.0V to 5.0V
Frequency
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
—
—
—
0.05 GHz
0.5 GHz to 3 GHz
0.05 GHz
0.5 GHz to 3 GHz
0.05 GHz
0.5 GHz to 3 GHz
—
—
Units
dB
dB
dB
dB
Ratio
Ratio
Ratio
Ratio
dB
dB
dB
dB
ns
ns
mV
dBm
dBm
dBm
dBm
dBm
dBm
µA
µA
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
Min
—
—
—
—
—
—
—
—
30
35
40
45
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
7
18
25
+25
+30
+60
+65
+40
+46
—
—
Max
1.2
1.1
0.9
0.8
1.5:1
1.4:1
1.4:1
1.3:1
—
—
—
—
—
—
—
—
—
—
—
—
—
1
1
GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input
Electrical Specifications (From –55°C to +85°C)
Parameter
Vcc
Vee
Test Conditions
+5.0V ± 10%
-5.0V to -8.0V
Frequency
—
—
Units
mA
mA
Min
—
—
SW-312
V 3.00
Typ
—
—
Max
1
1
Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
Function
Vee
GND
GND
GND
RF2
GND
GND
GND
Pin No.
9
10
11
12
13
14
15
16
Function
RFC
GND
GND
RF1
GND
GND
Vcc
C1
Pin Configuration (Top View)
RFC
GND
GND
RF1
GND
GND
Vcc
C1
GND
GND
GND
RF2
GND
GND
GND Orientation Mark
Vee
Absolute Maximum Ratings 3
Parameter
Max Input Power
50 MHz
500 - 2000 MHz
Supply Voltages
Vcc
Vee
Control Voltage 4
Operating Temperature
Storage Temperature
Absolute Maximum
+27 dBm
+34 dBm
+5.5V
-8.5V
-0.5V, to Vcc +0.5V
-55°C to +125°C
-65°C to +150°C
3. Operation of this device above any one of these parameters
may cause permanent damage.
4. Standard CMOS TTL interface, latch-up will occur if logic
signal is applied prior to power supply.
Truth Table
Control
Input
LO
HIGH
Condition of Switch
RF Common to Each RF Port
RF1
RF2
On Off
Off On
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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