ZVN4206AV 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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 Zetex Semiconductors |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4206AV
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt VDS
* RDS(on)= 1Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
ABSOLUTE MAXIMUM RATINGS.
D
G
S
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at Tamb=25°C
Continuous Body Diode Current at Tamb
=25°C
VDS
ID
IDM
VGS
Ptot
ISD
60 V
600 mA
8A
± 20 V
700 mW
600 mA
www.DataSheet4AU.vcoamlanche Current – Repetitive
IAR
600 mA
Avalanche Energy – Repetitive
EAR
15 mJ
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS 60
V ID=1mA, VGS=0V
Gate-Source Threshold Voltage VGS(th) 1.3 3
V ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
10 µA VDS=60V, VGS=0
100 µA VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
3
A VDS=25V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
1Ω
1.5 Ω
VGS=10V,ID=1.5A
VGS=5V,ID=.0.5A
Forward Transconductance(1)(2) gfs
300
mS VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100 pF
Common Source Output
Capacitance (2)
Coss
60 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
20 pF
Turn-On Delay Time (2)(3)
td(on)
8 ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
tr
td(off)
12 ns VDD ≈25V, ID=1.5A,VGEN=10V
12 ns
Fall Time (2)(3)
tf 15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4206AV
TYPICAL CHARACTERISTICS
10
8
6
4
2
0
0
VGS=
20V
16V
14V
12V
10 20 30 40
VDS - Drain Source Voltage (Volts)
Output Characteristics
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
50
10
8
6
4
2
0
2 468
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
20V
16V
14V
12V
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
10
10
8
6
4
ID=
2 3A
1.5A
0.5A
0
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
6
VDS=10V
4
2
0
0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
VGS=3.5V
4.5V 6V 8V 10V
10
14V
1.0
2200VV
0.1
0.1
1.0
ID-Drain Current (Amps)
On-resistance v drain current
10
2.6
2.4 VGS=10V
2.2 ID=1.5A
2.0
1.8
1.6
1.4
1.2
Drain-Source Resistance RDS(on)
VGS=VDS
1.0 ID=1mA
0.8 Gate Threshold Voltage VGS(TH)
0.6 -50 -25 0 25 50 75 100 125 150 175 200 225
Tj-Junction Temperature (°C)
Normalised RDS(on) and VGS(th) v Temperature
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관련 데이터시트
ZVN4206A
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Zetex Semiconductors
ZVN4206AV
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET - Zetex Semiconductors