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Zetex Semiconductors |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt VDS
* RDS(on)= 1Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
PARTMARKING DETAIL - ZVN4206V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb = 25°C
Pulsed Drain Current
Gate-Source Voltage
www.DataSheet4U.com
Power Dissipation at Tamb = 25°C
Continuous Body Diode Current at Tamb =
25°C
Avalanche Current - Repetitive
Avalanche Energy - Repetitive
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
ISD
IAR
EAR
Tj:Tstg
ZVN4206GV
D
S
D
G
VALUE
60
1
8
± 20
2
600
600
15
-55 to +150
UNIT
V
A
A
V
W
mA
mA
mJ
°C
ZVN4206GV
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 60
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1.3 3
V ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
10 µA
100 µA
VDS=60V, VGS=0V
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current (1)
ID(on)
3
A VDS=25V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
1Ω
1.5 Ω
VGS=10V, ID=1.5A
VGS=5V, ID=0.5A
Forward Transconductance
(1)(2)
gfs
300
mS VDS=25V,ID=1.5A
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
100 pF
60 pF
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
20 pF
Turn-On Delay Time (2)(3)
td(on)
8 ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
tr
td(off)
12 ns VDD ≈25V, ID=1.5A, VGEN
=10V
12 ns
Fall Time (2)(3)
tf 15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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