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MJE13004 반도체 회로 부품 판매점

(MJE13004 / MJE13005) High Voltage Switch Mode Application



Fairchild Semiconductor 로고
Fairchild Semiconductor
MJE13004 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MJE13004/13005
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: MJE13004
: MJE13005
VCEO
Collector-Emitter Voltage
: MJE13004
: MJE13005
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: MJE13004
: MJE13005
Test Condition
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2% Pulse
VEB = 9V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 2A
IB1 = - IB2 = 0.4A
RL = 62.5
Value
600
700
300
400
9
4
8
2
75
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Min. Typ. Max. Units
300 V
400 V
1 mA
10 60
8 40
0.5 V
0.6 V
1V
1.2 V
1.6 V
65 pF
4 MHz
0.8 µs
4 µs
0.9 µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001


MJE13004 데이터시트, 핀배열, 회로
Typical Characteristics
100
V = 5V
CE
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10
VCC=125V
tSTG IC=5IB
1
tF
0.1
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2001 Fairchild Semiconductor Corporation
10
10
1 VBE(sat)
I =4I
CB
0.1
VCE(sat)
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC=125V
IC=5IB
Ib1= - IB2
1
tr
0.1
tD, VBE(off)=5V
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
10
10
DC
1
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
Rev. A1, February 2001




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