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PDF FDS6676AS Data sheet ( Hoja de datos )
| Número de pieza | FDS6676AS | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2005
www.DataSheet4U.com
FDS6676AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDS6676AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V
RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676AS
FDS6676AS
13’’
FDS6676AS
FDS6676AS_NL (Note 3)
13’’
©2004 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
30
±20
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2500 units
FDS6676AS Rev B
1 page  
Typical Characteristics (continued)
10
ID = 14.5A
8
6
4
VDS = 10V
20V
15V
2
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
3500
3000
2500
2000
1500
1000
500
Crss
0
0
Coss
f = 1MHz
VGS = 0 V
Ciss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
P(pk
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6676AS Rev B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS6676AS.PDF ] | |
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